Optimal Selection and Experimental Verification of Wide-Bandgap Semiconductor for Betavoltaic Battery

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Read in full from the MDPI article XML (loop-3 pass 44). Equation 1: the total efficiency η = P_max / P_in = I_sc·V_oc·FF / (A·E_ave·q), P_in the power of the isotope source (A its activity, E_ave the average particle energy); 'the total energy conversion efficiency (η) … can be divided into isotope source efficiency (η_s) and semiconductor device efficiency (η_d)'; η_s 'about 35% when the thickness of 63Ni is 500 nm with single-side emission'. 4H-SiC PIN devices measured under a ⁶³Ni source of 1 × 3 cm² active area and 15 mCi total activity: Table 3 — I_sc 2.91 nA, V_oc 1.41 V, FF 0.81, η_d 7.31 % (14.88 % under an electron beam); Table 4 — this work (SiC): V_oc 1.22–1.41 V, FF 0.81–0.89, η 2.34–2.56 %. The 7.31 % is the device stage only; the whole-battery figure is the 2.34–2.56 %.

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